A aggregate of experiments and idea have helped researchers
at King Abdullah university of technological know-how and technology (KAUST) to
improve the knowledge of fundamental physics questions on molecular doping [1]
-- these will underpin the improvement of organic sun cells and field impact
transistors.
Molecular doping is an important technique of creating
flexible and low-value optoelectronic devices such as natural sun cells and
field impact transistors. The method involves the managed addition of
impurities called dopants into conjugated polymer skinny films; this permits an
otherwise electrically inert fabric to behave like a semiconductor.
but, dopants which are electron-donating (n-type) can easily
become oxidized if not housed beneath vacuum or inert atmosphere. This reduces
tool overall performance, that's a problem due to the fact many key processing
steps are currently done under ambient conditions.
Max L. Tietze from the university's sun & Photovoltaics
Engineering research middle (SPERC) and associates have now tested this
instability hassle in greater element.
In 2013, the researchers validated that by way of the usage
of natural semiconductors with sufficiently low power levels, they produced
pretty strong n-type conductive movies. Getting this result by means of using a
di-tungsten complex as their n-dopant became a wonder, due to the fact in pure
movies a di-tungsten complicated straight away degrades in air. at the time,
the researchers presented viable causes
for this phenomenon: one is single electron switch from the dopant to the host
material and the other is the formation of hybridized electronic states.
To advantage deeper insight into the underlying mechanism,
the researchers exposed 4 forms of n-doped organic thin movies to air. however,
they observed the passivation impact most effective in movies wherein the host
material's electron affinity exceeds a important fee. any other strand of
inquiry for the researchers changed into to use both conductivity measurements
and photoemission spectroscopy to verify the findings.
The researchers have now teamed up with the principle
organization led by Jean-Luc Bredas at KAUST. They confirmed that the formation
of hybridized digital host-dopant states may be excluded by means of numerical
calculations, an effect that is owed to the 3-dimensional (paddle wheel) shape
of the di-tungsten complicated.
rather, it's miles conclusively shown that single electron
transfer to oxygen-water complexes, which had been alleged to represent
electron traps of an conventional intensity of three.6 eV in conjugated
polymers, definitely governs the degradation of the n-doped films, and hence
their passivation. for this reason, Tietze's crew ought to identify a preferred
limit for accomplishing air solid molecular n-kind doping on a quantitative
basis.
"This combination of experimental and high stage
theoretical paintings honestly addresses the most recent questions regarding
the fundamental physics of molecular doping," said Tietze.